Method of forming organosilicon oxide film and multilayer...

Details Method of forming organosilicon oxide film and multilayer... Method of forming organosilicon oxide film and multilayer...

2006-01-04

2010-11-09

Meeks, Timothy H (Department: 1715)

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

C427S569000, C427S578000, C427S096100, C427S097100

Reexamination Certificate

active

07829159

ABSTRACT:
A method of forming an organosilicon oxide film by plasma CVD includes: (i) adjusting a temperature of a susceptor on which a substrate is placed to lower than 300° C.; (ii) introducing at least tetraethylorthosilicate (TEOS) and oxygen into a reactor in which the susceptor is disposed; (iii) applying high-frequency RF power and low-frequency RF power; and (iv) thereby depositing an organosilicon oxide film on the substrate.

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DeCrosta et al., “Charge issues in high oxygen gas ratio tetraethylorthosilicate plasma enhanced chemical vapor deposition films,” May/Jun. 1996, J. Vac. Sci. Technolog. A 14(3), p. 709-713.
DeCrosta et al. “charge issues in high oxygen gas ratio tetraethylorthosilicate plasma enhanced chemical vapor deposition films,” May/Jun. 1996, J. Vac. Sci. Technology A14(3) p. 709-713.
TimeDomain CVD Inc., Plasma-Enhanced Deposition from TEOS and Oxygen.

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