Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2006-08-22
2006-08-22
Abraham, Fetsum (Department: 2826)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C439S791000, C439S216000, C439S288000, C257S411000, C257S405000
Reexamination Certificate
active
07094707
ABSTRACT:
A method of nitriding a gate oxide layer by annealing a preformed oxide layer with nitric oxide (NO) gas in a hot wall, single wafer furnace is provided. The nitridation process can be carried out rapidly (i.e., at nitridation times of 30 seconds to 2 minutes) while providing acceptable levels of nitridation (i.e., up to 6 at. %) and desirable nitrogen/depth profiles. The nitrided gate oxide layer can optionally be reoxidized in a second oxidation step after the nitridation step. A gate electrode layer (e.g., boron doped polysilicon) can then be deposited on top of the nitrided gate oxide layer or on top of the reoxidized and nitrided gate oxide layer.
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Narayanan Sundar
Ramkumar Krishnaswamy
Abraham Fetsum
Cypress Semiconductor Corporation
Merchant & Gould P,C,
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