Method of forming nitride semiconductor layer on patterned...

Details Method of forming nitride semiconductor layer on patterned... Method of forming nitride semiconductor layer on patterned...

2008-02-29

2009-12-29

Zarneke, David A (Department: 2891)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S046000, C257S103000, C257S615000, C257SE33025, C257SE33028

Reexamination Certificate

active

07638414

ABSTRACT:
A method of forming high quality nitride semiconductor layers on a patterned substrate and a light emitting diode having the same are disclosed. After forming a nucleation layer on the patterned substrate, a first 3D and 2D growth layers are formed thereon in this order by growing nitride semiconductor layers in 3D and 2D growth conditions. Then, a second 3D growth layer is formed on the first 2D growth layer by growing a nitride semiconductor layer in another 3D growth condition, and a second 2D growth layer is formed on the second 3D growth layer by growing a nitride semiconductor layer in another 2D growth condition. As such, the thickness of the 3D growth layer can be reduced by alternately forming the 3D and 2D growth layers, thereby preventing the 3D growth layer from having a rough surface and improving crystal quality of the final 2D growth layer.

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Hyung Koun Cho, et al.; “Microstructural analysis of GaN films grown by a two-step technique on patterned GaN and sapphire” Superlattices and Microstructures, vol. 36, 2004, pp. 385-391, Elsevier Ltd.

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