Method of forming nitride semiconductor and electronic...

Details Method of forming nitride semiconductor and electronic... Method of forming nitride semiconductor and electronic...

2011-07-12

2011-07-12

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C257SE21120

Reexamination Certificate

active

07977223

ABSTRACT:
A method of forming a nitride semiconductor through ion implantation and an electronic device including the same are disclosed. In the method, an ion implantation region composed of a line/space pattern is formed on a substrate at an ion implantation dose of more than 1E17 ions/cm2to 5E18 ions/cm2or less and an ion implantation energy of 30˜50 keV, and a metal nitride thin film is grown on the substrate by epitaxial lateral overgrowth, thereby decreasing lattice defects in the metal nitride thin film. Thus, the electronic device has improved efficiency.

REFERENCES:
patent: 2009/0215248 (2009-08-01), Nakahata et al.

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