Method of forming narrow trenches in semiconductor substrates

Details Method of forming narrow trenches in semiconductor substrates Method of forming narrow trenches in semiconductor substrates

2005-12-20

2005-12-20

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S270000, C438S271000, C438S272000, C438S273000, C438S274000, C438S589000, C438S700000

Reexamination Certificate

active

06977203

ABSTRACT:
A method of forming a trench within a semiconductor substrate. The method comprises, for example, the following: (a) providing a semiconductor substrate; (b) providing a patterned first CVD-deposited masking material layer having a first aperture over the semiconductor substrate; (c) depositing a second CVD-deposited masking material layer over the first masking material layer; (d) etching the second masking material layer until a second aperture that is narrower than the first aperture is created in the second masking material within the first aperture; and (e) etching the semiconductor substrate through the second aperture such that a trench is formed in the semiconductor substrate. In preferred embodiments, the method of the present invention is used in the formation of trench MOSFET devices.

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Stanley Wolf, Richard N. Tauber; SIlicon Processing For The VLSI 1986; Lattice Press; vol. 1; pp. 418-420.

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