Method of forming nanotube vertical field effect transistor

Details Method of forming nanotube vertical field effect transistor Method of forming nanotube vertical field effect transistor

2007-06-20

2010-06-15

Pert, Evan (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S332000, C257SE21410, C257SE29262, C977S938000

Reexamination Certificate

active

07736979

ABSTRACT:
A nanotube field effect transistor and a method of fabrication are disclosed. The method includes electrophoretic deposition of a nanotube to contact a region of a conductive layer defined by an aperture. Embodiments of the present disclosure provide a method of depositing nanotubes in a region defined by an aperture, with control over the number of nanotubes to be deposited, as well as the pattern and spacing of nanotubes. For example, electrophoretic deposition, along with proper configuration of the aperture, allows at least one nanotube to be deposited in a target region with nanometer scale precision. Pre-sorting of nanotubes, e.g., according to their geometries or other properties, may be used in conjunction with embodiments of the present disclosure to facilitate fabrication of devices with specific performance requirements.

REFERENCES:
patent: 6515325 (2003-02-01), Farnworth et al.
patent: 6566704 (2003-05-01), Choi et al.
patent: 6616497 (2003-09-01), Choi et al.
patent: 6740910 (2004-05-01), Roesner et al.
patent: 6830981 (2004-12-01), Lee et al.
patent: 6858891 (2005-02-01), Farnworth et al.
patent: 6933222 (2005-08-01), Dubin et al.
patent: 6979590 (2005-12-01), Rueckes et al.
patent: 6995046 (2006-02-01), Rueckes et al.
patent: 7045421 (2006-05-01), Rueckes et al.
patent: 7081385 (2006-07-01), Farnworth et al.
patent: 7091096 (2006-08-01), Balasubramanian et al.
patent: 7132714 (2006-11-01), Bae et al.
patent: 7135773 (2006-11-01), Furukawa et al.
patent: 7211844 (2007-05-01), Furukawa et al.
patent: 2003/0102222 (2003-06-01), Zhou et al.
patent: 2005/0156203 (2005-07-01), Bae et al.
patent: 2005/0167655 (2005-08-01), Furukawa et al.
patent: 2006/0169972 (2006-08-01), Furukawa et al.
patent: 2006/0286023 (2006-12-01), Huang
patent: 2007/0122986 (2007-05-01), Sandhu et al.
patent: 2001312953 (2001-11-01), None
patent: 2006111498 (2006-04-01), None
patent: WO 03/081687 (2003-10-01), None
Choi, W. B. et al, “Carbon Nanotube for Nanoelectronics”, IEEE-NANO 2003, San Francisco, CA, 2003.
K. Yamoto et al., “Orientation and Purification of Carbon Nanotubes Using AC Electrophoresis,” J. Phys. D: Appl. Phys. 31 (1998), pp. L34-L36.
W. B. Choi et al., “Electrophoresis Deposition of Carbon Nanotubes for Triode-Type Field Emission Display,” Applied Physics Letters, vol. 78, No. 11, Mar. 12, 2001, pp. 1547-1549.
G. S. Duesberg et al., “Growth of Isolated Carbon Nanotubes with Lithographically Defined Diameter and Location,” Nano Letters, 2003, vol. 3, No. 2, pp. 257-259.
W. Hoenlein et al., “Carbon Nanotubes for Microelectronics: Status and Future Prospects,” Materials Science and Engineering C23 (2003) pp. 663-669.
G. S. Duesberg et al., “Ways Towards The Scaleable Integration of Carbon Nanotubes into Silicon Based Technology,” Diamond and Relatled Materials 13 (2004) pp. 354-361.
A. P. Graham et al., “Towards the Integration of Carbon Nanotubes in Microelectronics,” Diamond and Related Materials 13 (2004) 1296-1300.
J. Hahn et al., “Fabrication of Clean Carbon Nanotube Field Emitters,” Applied Physics Letters 88, 113101 (2006).
H. Kim et al., “Parallel Patterning of Nanoparticles via Electrodynamic Focusing of Charged Aerosols,” Nature Nanotechnology, vol. 1, Nov. 2006, pp. 117-121.
W. B. Choi, “Ultrahigh-Density Nanotransistors by Using Selectively Grown Vertical Carbon Nanotubes,” Applied Physics Letters, vol. 79, No. 22, Nov. 26, 2001, pp. 3696-3698.
J. Bae et al, “Field Emission Properties of Carbon Nanotubes Deposited by Electrophoresis,” Physica B 323 (2002), pp. 168-170.
H. Ma, et al., “Electron Field Emission Properties of Carbon Nanotubes-Deposited Flexible Film,” Applied Surface Science 251 (2005) pp. 258-261.
D. A. Kurnosov, et al., “Influence of the Interelectrode Distance in Electrophoretic Cold Cathode Fabrication on the Emission Uniformity,” Applied Surface Science 215 (2003) pp. 232-236.
Notification Of Transmittal Of The International Search Report And The Written Opinion Of The International Searching Authority, mailed Mar. 6, 2009 (9 pages).

Affiliated with

Also associated with

Rating

Method of forming nanotube vertical field effect transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming nanotube vertical field effect transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming nanotube vertical field effect transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4239701