Method of forming multiple layer attenuating phase shifting mask

Details Method of forming multiple layer attenuating phase shifting mask Method of forming multiple layer attenuating phase shifting mask

1998-03-02

1999-04-27

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430311, G03F 900

Patent

active

058979794

ABSTRACT:
This invention describes a new method of forming a double layer attenuating phase shifting mask. A first pattern is formed in a layer of attenuating phase shifting material and an alignment pattern is formed in a layer of opaque material. A first resist is used to form the first pattern. A pellicle is used to restrict the deposition of a second resist to the alignment region of the mask only and as a result neither the first resist nor the second resist must withstand dry etching steps. The first resist is removed before the step of forming the first pattern in the attenuating phase shifting material and cleaning before is step is carried out is thereby improved.

REFERENCES:
patent: 5272024 (1993-12-01), Lin
patent: 5382483 (1995-01-01), Young
patent: 5503951 (1996-04-01), Flanders et al.

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