Method of forming multiple gate oxide thicknesses using high den

Details Method of forming multiple gate oxide thicknesses using high den Method of forming multiple gate oxide thicknesses using high den

1998-04-22

2000-08-29

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

438981, 438776, 438770, 438786, H01L 21469

Patent

active

061108421

ABSTRACT:
A method for forming integrated circuits having multiple gate oxide thicknesses. A high density plasma is used for selective plasma nitridation to reduce the effective gate dielectric thickness in selected areas only. In one embodiment, a pattern (12) is formed over a substrate (10) and a high density plasma nitridation is used to form a thin nitride or oxynitride layer (18) on the surface of the substrate (10) . The pattern (12) is removed and oxidation takes place. The nitride (or oxynitride) layer (18) retards oxidation (20b), whereas, in the areas (20a) where the nitride (or oxynitride) layer (18) is not present, oxidation is not retarded. In another embodiment, a thermal oxide is grown. A pattern is then placed that exposes areas where a thinner effective gate oxide is desired. The high density plasma nitridation is performed converting a portion of the gate oxide to nitride or oxynitride. The effective thickness of the combined gate dielectric is reduced.

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October 1997, American Vacuum Society National Symposium, San Jose, CA, "Modeling of Ultrathin Oxynitride Gate Dielectrics Formed by Remote Plasma Nitridation of Silicon Dioxide" pp. 1-12 (Dixit Kapila and Sunil Hattangady).
IEEE Electron Device Letters, vol. 16, No. 7, Jul. 1995, "Simultaneous Growth of Different Thickness Gate Oxides in Silicon CMOS Processing", pp. 301-302 (Brian Doyle, Member, IEEE, Hamid R. Soleimani and Ara Philipossian).

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