Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-02-01
2005-02-01
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
Reexamination Certificate
active
06849508
ABSTRACT:
A method is disclosed for forming multiple gate insulators on a strained semiconductor heterostructure as well as the devices and circuits formed therefrom. In an embodiment, the method includes the steps of depositing a first insulators on the strained semiconductor heterostructure, removing at least a portion of the first insulators from the strained semiconductor heterostructure, and depositing a second insulators on the strained semiconductor heterostructure.
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Bulsara Mayank
Lochtefeld Anthony
AmberWave Systems Corporation
Fourson George
Hurwitz & Thibeault, LLP
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