Method of forming multiple fins for a semiconductor device

Details Method of forming multiple fins for a semiconductor device Method of forming multiple fins for a semiconductor device

2011-08-23

2011-08-23

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S149000, C438S157000, C438S176000, C438S197000, C438S585000, C438S587000, C257S241000, C257S287000, C257S288000, C257S347000, C257S401000

Reexamination Certificate

active

08003466

ABSTRACT:
A fabrication process for a FinFET device is provided. The process begins by providing a semiconductor wafer having a layer of conductive material such as silicon. A whole-field arrangement of fins is then formed from the layer of conductive material. The whole-field arrangement of fins includes a plurality of conductive fins having a uniform pitch and a uniform fin thickness. Next, a cut mask is formed over the whole-field arrangement of fins. The cut mask selectively masks sections of the whole-field arrangement of fins with a layout that defines features for a plurality of FinFET devices. The cut mask is used to remove a portion of the whole-field arrangement of fins, the portion being unprotected by the cut mask. The resulting fin structures are used to complete the fabrication of the FinFET devices.

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