Method of forming minute patterns using positive chemically ampl

Details Method of forming minute patterns using positive chemically ampl Method of forming minute patterns using positive chemically ampl

1992-08-06

1993-11-02

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430270, 430272, 430325, 430330, 430945, G03F 738, G03F 732

Patent

active

052582663

ABSTRACT:
A method of forming a minute pattern with controlled resist profile by using chemically amplifying type resist and deep UV ray is disclosed. A positive chemically amplifying type resist is applied on a silicon substrate, to form a resist film of the resist on the silicon substrate. The resist film is selectively irradiated with KrF excimer laser beam by using a photomask. Thereafter, an electric field directed vertically downward is applied to the resist film while the resist film is heated. According to this method, H.sup.+ ions which are catalyst for destroying the dissolution inhibiting capability of the dissolution inhibitor generated in the resist film move vertically downward, so that diffusion of the H.sup.+ ions in the lateral direction during heating can be prevented. Consequently, a positive minute pattern having sidewall formed vertical to the substrate can be provided.

REFERENCES:
patent: Re31220 (1983-04-01), Ernsberger
patent: 4996123 (1991-02-01), Nomura et al.
patent: 5004667 (1991-04-01), Arahara et al.
patent: 5158861 (1992-10-01), Tokui et al.
Blum et al., "A study of the Effect of Key Processing Variables on the Lithographic Performance of Microposit SAL601-ER7 Resist," J. Vac. Sci. Technol. B 6(6), Nov./Dec. 1988, pp. 2280-2285.

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