Method of forming minute patterns using chemically amplifying ty

Details Method of forming minute patterns using chemically amplifying ty Method of forming minute patterns using chemically amplifying ty

1990-03-30

1992-10-27

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430272, 430326, 430330, G03F 738, G03F 740

Patent

active

051588617

ABSTRACT:
A method of forming a minute pattern with controlled resist profile uses a chemically amplifying type resist and deep UV rays. Microposit SAL601-ER7 is applied on a silicon substrate, to form a resist film of the resist on the silicon substrate. The resist film is selectively irradiated with KrF excimer laser beam by using a photomask. Thereafter, an electric field directed vertically downward is applied to the resist film while the resist film is heated. According to this method, H.sup.+ ions which are a catalyst for cross linking generated in the resist film move vertically downward, so that diffusion of the H.sup.+ ions in the lateral direction during heating can be prevented. Consequently, negative minute patterns having sidewalls formed vertical to the substrate can be provided.

REFERENCES:
patent: Re31220 (1983-04-01), Ernsberger
Blum et al., "A study of the Effect of Key Processing Variables on the Lithographic Performance of Microposit SAL601-ER7 Resist," J. Vac. Sci. Technol. B 6(6), Nov./Dec. 1988, pp. 2280-2285.

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