Method of forming micro patterns

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface

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430325, 430328, 430330, 430394, 430494, G03C 500

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049886096

ABSTRACT:
In a patterning method according to this invention, a surface region of a resist layer is solution-retarded by a developer, and, then, the resist layer is patterned. Therefore, a desired shape of a side wall of the resist layer may be obtained by varying a solubility of the resist layer, with the result that a resist pattern with the side wall orthogonal to a surface of the substrate or the overhung side may be formed.

REFERENCES:
patent: 4775609 (1988-10-01), McFarland
patent: 4863827 (1989-09-01), Jain et al.
Spak et al., Proceedings of SPE Conf., "Polymers, Principles, Processing and Materials," ACS, Allenville, N.Y., Oct. 1985, pp. 247-269.
Chiong et al., "Image Reversal . . . " IBM Tech. Disclosure Bull., vol. 27, No. 1A, Jun. 1984, pp. 273-274.
Alling et al., "Image Reversal of Positive Photoresist a New Tool for Advancing Integrated Circuit Fabrication," SPIE vol. 539 Advances in Resist Technology and Processing II, pp. 194-218, (1985).
Moritz, "Optical Single Layer Lift-Off Process", IEEE Transactions on Electron Devices, vol. ED-32, No. 3, pp. 672-676, Mar. 1985.

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