Method of forming metal wiring for high voltage element

Details Method of forming metal wiring for high voltage element Method of forming metal wiring for high voltage element

2005-01-07

2008-11-18

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S623000, C438S624000, C438S625000, C438S626000, C257S758000, C257S759000, C257S760000

Reexamination Certificate

active

07452802

ABSTRACT:
Disclosed herein is a method of forming metal wirings for high voltage elements. According to the present invention, after a copper film is formed, a wet etch process using an interlayer insulating film as an etch mask is performed to pattern the copper film. It is thus possible to form copper wirings for high voltage elements the width of which is very wide. Furthermore, a wet etch process using a chemical aqueous solution is performed instead of a copper polishing process. The cost for forming a metal wiring can be thus saved. Moreover, by controlling a wet etch time, the space between metal wirings, which is narrower than a width of the metal wiring, can be secured sufficiently.

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