Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-03-06
2010-02-16
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C257SE29273
Reexamination Certificate
active
07662675
ABSTRACT:
A method of forming a metal thin film includes positioning a substrate in a region corresponding to a target, with the target including silver (Ag) and being provided in a reaction space, supplying an inert gas and an oxygen-containing gas into the reaction space. Moreover, the method further includes forming a silver (Ag)-containing conductive film on the substrate by generating plasma between the target and the substrate.
REFERENCES:
patent: 5367285 (1994-11-01), Swinehart et al.
patent: 5607559 (1997-03-01), Yamada et al.
patent: 6838696 (2005-01-01), Kobayashi et al.
patent: 6933568 (2005-08-01), Yang et al.
Jung Bae Hyoun
Kang Ho Min
Kim Taek Hee
Yun Pil Sang
F. Chau & Associates LLC
Samsung Electronics Co,. Ltd.
Vu David
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