Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-05-24
2005-05-24
Niebling, John F. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S239000, C438S608000, C438S957000, C438S785000
Reexamination Certificate
active
06897105
ABSTRACT:
An embodiment of the instant invention is a method of forming a electrically conductive structure insulatively disposed from a second structure, the method comprising: providing the second structure; forming the electrically conductive structure of a material (step118of FIG.1) that remains substantially conductive after it is oxidized; forming an electrically insulative layer (step116of FIG.1) between the second structure and the conductive structure; and oxidizing the conductive structure by subjecting it to an ozone containing atmosphere for a duration of time and at a first temperature.
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Anthony John M.
McIntyre Paul
Wallace Robert M.
Wilk Glen D.
Brady III Wade James
Niebling John F.
Pompey Ron
Telecky , Jr. Frederick J.
Texas Instrument Incorporated
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