Method of forming metal oxide gate structures and capacitor...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S239000, C438S608000, C438S957000, C438S785000

Reexamination Certificate

active

06897105

ABSTRACT:
An embodiment of the instant invention is a method of forming a electrically conductive structure insulatively disposed from a second structure, the method comprising: providing the second structure; forming the electrically conductive structure of a material (step118of FIG.1) that remains substantially conductive after it is oxidized; forming an electrically insulative layer (step116of FIG.1) between the second structure and the conductive structure; and oxidizing the conductive structure by subjecting it to an ozone containing atmosphere for a duration of time and at a first temperature.

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patent: 6168980 (2001-01-01), Yamazaki et al.

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