Method of forming material using atomic layer deposition and...

Details Method of forming material using atomic layer deposition and... Method of forming material using atomic layer deposition and...

2006-05-10

2008-09-16

Nguyen, Tuan H (Department: 2813)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S240000

Reexamination Certificate

active

07425514

ABSTRACT:
Disclosed are methods of forming dielectric materials using atomic layer deposition (ALD) and methods of forming dielectric layers from such materials on a semiconductor device. The ALD process utilizes a first reactant containing at least one alkoxide group that is chemisorbed onto a surface of a substrate and then reacted with an activated oxidant that contains no hydroxyl group to form a dielectric material exhibiting excellent step coverage and improved leakage current characteristics.

REFERENCES:
patent: 6632279 (2003-10-01), Ritala et al.
patent: 6664186 (2003-12-01), Callegari et al.
patent: 6743475 (2004-06-01), Skarp et al.
patent: 6780704 (2004-08-01), Raajimakers et al.
patent: 7007933 (2006-03-01), Lee et al.
patent: 2003/0040196 (2003-02-01), Lim et al.
patent: 2003/0113480 (2003-06-01), Kil et al.
patent: 2004/0009307 (2004-01-01), Koh et al.
patent: 2004/0065253 (2004-04-01), Tois et al.

Affiliated with

Also associated with

Rating

Method of forming material using atomic layer deposition and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming material using atomic layer deposition and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming material using atomic layer deposition and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3977034