Method of forming low-k films

Details Method of forming low-k films Method of forming low-k films

2005-02-01

2005-02-01

Everhart, Caridad (Department: 2825)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S687000, C438S769000

Reexamination Certificate

active

06849561

ABSTRACT:
To deposit silicon carbide into a substrate, there is introduced into a reaction zone a gas including source gas of silicon, carbon, oxygen and an inert gas. An electric field is generated using low and high frequency RF power to produce a plasma discharge in the reaction zone to cause the deposition.

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