Method of forming lightly doped drains in metalic oxide semicond

Details Method of forming lightly doped drains in metalic oxide semicond Method of forming lightly doped drains in metalic oxide semicond

1997-06-04

1998-06-23

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438307, H01L 21336

Patent

active

057705089

ABSTRACT:
The present invention relates to a method of forming lightly doped drains in metallic oxide semiconductor (MOS) components. The method includes forming a first, second, and third insulating layer above a silicon substrate having a gate, etching back the layers to leave behind L-shaped first spacers on sidewalls of the gate, followed by doping second type ions into the silicon substrate to form first lightly doped drains in the silicon substrate surface below the L-shaped first spacers, and second lightly doped drains in the silicon substrate surface elsewhere, further forming a fourth insulating to form third spacers, and using the using the third spacers, the first insulating layer, and the gate as masks when doping second type ions into the silicon substrate so as to form source/drain regions in silicon substrate surfaces not covered by the third spacers. Such a method produces greater yield and reduces leakage current from the transistor components.

REFERENCES:
patent: 4784965 (1988-11-01), Woo et al.
patent: 4855247 (1989-08-01), Ma et al.
patent: 5024959 (1991-06-01), Pfiester
patent: 5153145 (1992-10-01), Lee et al.
patent: 5234850 (1993-08-01), Liao
patent: 5472896 (1995-12-01), Chen et al.

Affiliated with

Also associated with

Rating

Method of forming lightly doped drains in metalic oxide semicond does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming lightly doped drains in metalic oxide semicond, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming lightly doped drains in metalic oxide semicond will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1394323