Method of forming lightly-doped drain by automatic PSG doping

Details Method of forming lightly-doped drain by automatic PSG doping Method of forming lightly-doped drain by automatic PSG doping

1997-06-04

1999-07-20

Booth, Richard A

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438307, 438563, H01L 21336

Patent

active

059267151

ABSTRACT:
A method of forming a LDD fabrication by automatic phosphoric silicate glass (PSG) doping is disclosed herein. A phosphoric silicate glass serves as a diffusion source. The phosphorous ions of phosphoric silicate glass can be driven into a substrate to form a lightly-doped drain (LDD)by a high temperature during a thermal annealing process. The diffusion method can prevent from the damage in the substrate and the increasing of leakage current. Additionally, a thermal oxide layer is formed on the gate electrode and the surface of the substrate by the thermal oxidation process. The thermal oxide layer can prevent ions from sequentially diffusing into the substrate during the subsequent thermal treatment process. Therefore, the present invention can effectively control the impurity concentration of the lightly-doped drain (LDD) to prevent from the impurity concentration of the LDD over high.

REFERENCES:
patent: 5273934 (1993-12-01), Ehinger et al.
patent: 5478776 (1995-12-01), Luftman et al.
patent: 5504024 (1996-04-01), Hsu
patent: 5599734 (1997-02-01), Byun et al.
patent: 5696016 (1997-12-01), Chen et al.
patent: 5747378 (1998-05-01), Fan et al.

Affiliated with

Also associated with

Rating

Method of forming lightly-doped drain by automatic PSG doping does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming lightly-doped drain by automatic PSG doping, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming lightly-doped drain by automatic PSG doping will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1331040