Method of forming LED semiconductor device having annealed...

Details Method of forming LED semiconductor device having annealed... Method of forming LED semiconductor device having annealed...

2011-06-07

2011-06-07

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C257S098000, C257SE21002

Reexamination Certificate

active

07955879

ABSTRACT:
In a method of forming an LED semiconductor device, and in an LED semiconductor device, an LED is provided on a substrate. A first encapsulant material layer is provided on the LED, and the first encapsulant material layer is firstly annealed. A luminescence conversion material layer is provided on the firstly annealed first encapsulant material layer, and the first encapsulant material layer and the luminescence conversion material layer and secondly annealed.

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