Method of forming isolation trench with spacer formation

Details Method of forming isolation trench with spacer formation Method of forming isolation trench with spacer formation

2006-12-05

2006-12-05

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S700000, C438S439000, C257SE21008, C257S552000, C257S559000

Reexamination Certificate

active

07144785

ABSTRACT:
A strained silicon semiconductor arrangement with a shallow trench isolation (STI) structure has a strained silicon (Si) layer formed on a silicon germanium (SiGe) layer. A trench extends through the Si layer into the SiGe layer, and sidewall spacers are employed that cover the entirety of the sidewalls within the trench in the SiGe layer. Following STI fill, polish and nitride stripping process steps, further processing can be performed without concern of the SiGe layer being exposed to a silicide formation process.

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