Method of forming interlayer film by altering fluidity of deposi

Details Method of forming interlayer film by altering fluidity of deposi Method of forming interlayer film by altering fluidity of deposi

1999-03-04

2000-10-24

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

438778, 438788, H01L 2131

Patent

active

061367265

ABSTRACT:
A method of forming an interlayer film on a substrate with a plurality of patterns formed thereon wherein the interlayer film is deposited on the substrate by a process comprising a plurality of steps in each of which a portion of the film is deposited so as to have different fluidity with the same source material.
In the first aspect of the method, a portion of the interlayer film is at first deposited so as to have relatively reduced fluidity, so that the film is formed with an almost uniform thickness regardless of any pattern width on the substrate. After this, the rest portion of the film is deposited so that it has relatively increased fluidity so as to fill up the trough between the patterns.
In the second aspect of the method, an undercoating film is formed in advance which is then treated to be hydrophobic so that a portion of the interlayer film deposited thereon reduces its fluidity, by which the portion is uniformly deposited regardless of any pattern width. Then, the rest portion of the film is deposited over the above portion of the film with relatively increased fluidity.

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