Method of forming interlayer film

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers

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438760, 438778, 438784, 438788, H01L 2131

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active

060488018

ABSTRACT:
A method of forming an interlayer film on a substrate with a plurality of patterns formed thereon wherein the interlayer film is deposited on the substrate by a process comprising a plurality of steps in each of which a portion of the film is deposited so as to have different fluidity with the same source material.

REFERENCES:
patent: 5132774 (1992-07-01), Matsuura et al.
patent: 5424253 (1995-06-01), Usami et al.
patent: 5562952 (1996-10-01), Nakahigashi et al.
patent: 5576247 (1996-11-01), Yano et al.
patent: 5593741 (1997-01-01), Ikeda
patent: 5665643 (1997-09-01), Shin
patent: 5683940 (1997-11-01), Yahiro
patent: 5691237 (1997-11-01), Ohkura et al.
patent: 5691247 (1997-11-01), Lavie et al.
patent: 5700720 (1997-12-01), Hashimoto
patent: 5703404 (1997-12-01), Matsuura

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