Method of forming inter-dielectric layer in semiconductor...

Details Method of forming inter-dielectric layer in semiconductor... Method of forming inter-dielectric layer in semiconductor...

2007-05-01

2007-05-01

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21614

Reexamination Certificate

active

10811152

ABSTRACT:
The present invention relates to a method of forming an interlayer dielectric film in a semiconductor device. More particularly, the present invention selectively forms an insulating film spacer only at a region where a plug is formed between metal lines and removes the insulating film spacer at a region where the plug is not formed to lower the aspect ratio between the metal lines, in a process of burying an insulating material between the metal lines to electrically insulate them. Therefore, the present invention can easily bury the insulating material even between the metal lines having a narrow gap without voids.

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