Method of forming insulating layer in semiconductor device

Details Method of forming insulating layer in semiconductor device Method of forming insulating layer in semiconductor device

2007-05-01

2007-05-01

Toledo, Fernando L. (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S786000, C438S788000, C257SE21277

Reexamination Certificate

active

10310143

ABSTRACT:
The present invention relates to a method of forming an insulating film in a semiconductor device. After a mixed gas of alkyl silane gas and N2O gas is supplied into the deposition equipment, a radio frequency power including a short pulse wave for causing incomplete reaction upon a gas phase reaction is applied to generate nano particle. The nano particle is then reacted to oxygen radical to form the insulating film including a plurality of nano voids. A low-dielectric insulating film that can be applied to the nano technology even in the existing LECVD equipment is formed.

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