Method of forming insulating film with few hydrogen atom inclusi

Details Method of forming insulating film with few hydrogen atom inclusi Method of forming insulating film with few hydrogen atom inclusi

1997-12-04

1999-11-02

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438151, 438486, 438487, H01L 2100, H01L 2120

Patent

active

059769181

ABSTRACT:
In accordance with the development of the fineness of MOSFETs, a gate insulating film and a capacitor insulating film are required to have a smaller thickness and a higher film quality. Accordingly, the present invention is intended to provide a method for forming a high-quality insulating film while preventing hydrogen atoms which cause a leak current and an electron trap from entering the insulating film. The present method uses a gas of molecules containing at least nitrogen, the gas is a compound which includes no oxygen atom and has no bond of a nitrogen atom and a hydrogen atom (N--H) and generates monoatomic nitrogen when the gas dissociates.

REFERENCES:
patent: 5256810 (1993-10-01), Rowe et al.
patent: 5840951 (1998-11-01), Hierstetter et al.
X.W. Wang et al, Extending Gate Dielectric Scaling Limit by Use of Nitride or Oxynitride, 1995 Symposium on VLSI Technology Digest of Technical Papers, pp. 109-110, Month Unknown.
Hisayo Sasaki Momose et al, Tunneling Gate Oxide Approach to Ultra-High Current Drive in Small Geometry Mosfets, Research and Development Center, Toshiba Corp., pp. 25.1.1 to 25.1.4, 1994, Month Unknown.

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