Method of forming highly resistive interconnects

Details Method of forming highly resistive interconnects Method of forming highly resistive interconnects

1999-01-08

2000-10-03

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438382, 438384, H01L 2702, H01L 218242

Patent

active

061272175

ABSTRACT:
Provided is a high resistance value vertically-integrated semiconductor interconnect, and a process to make such highly resistive interconnects together with low resistive interconnects in a precisely controllable manner. In addition, provided is an SRAM cell with highly resistive contact processing for a pull-up resistor.

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