Method of forming high voltage device

Details Method of forming high voltage device Method of forming high voltage device

1998-05-27

1999-10-12

Chaudhuri, Olik

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438529, H01L 21265

Patent

active

059666080

ABSTRACT:
A method of forming high voltage device. A first type semiconductor having at least a gate formed thereon is provided. A first ion implantation with a second type dopant is performed to form a first diffusion region in the semiconductor substrate. An oxide layer is formed on the semiconductor substrate. A second ion implantation with the second type dopant is performed to form a second diffusion region within the first diffusion region. A silicon nitride layer is formed on the oxide layer, through which an opening penetrates to exposed the oxide layer. A third ion implantation with the second type dopant is performed using the silicon nitride layer as a mask to form a third diffusion region within the second diffusion region. Drive-in is performed to deepen the third diffusion region. The silicon nitride layer is removed. The exposed oxide layer is transformed into a field oxide layer. A fourth ion implantation with a first type dopant is performed to form a fourth diffusion region as a source/drain region within the second diffusion region under a surface between the field oxide layer and the gate.

REFERENCES:
patent: 4716126 (1987-12-01), Cogan
patent: 4970173 (1990-11-01), Robb

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