Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2011-06-21
2011-06-21
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S591000, C438S785000, C257SE21283, C427S249150, C427S249170, C427S255190, C427S255260
Reexamination Certificate
active
07964515
ABSTRACT:
A method is provided for forming high dielectric constant (high-k) films for semiconductor devices. According to one embodiment, a metal-carbon-oxygen high-k film is deposited by alternately and sequentially exposing a substrate to a metal-carbon precursor and near saturation exposure level of an oxidation source containing ozone. The method is capable of forming a metal-carbon-oxygen high-k film with good thickness uniformity while impeding growth of an interface layer between the metal-carbon-oxygen high-k film and the substrate. According to one embodiment, the metal-carbon-oxygen high-k film may be treated with an oxidation process to remove carbon from the film.
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Clark Robert D.
Wajda Cory
Joy Jeremy J
Smith Zandra
Tokyo Electron Limited
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