Method of forming high aspect ratio structures

Details Method of forming high aspect ratio structures Method of forming high aspect ratio structures

2004-02-27

2008-12-23

Alanko, Anita K (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Having liquid and vapor etching steps

C438S243000, C438S244000, C438S710000, C438S723000, C438S753000, C216S057000, C216S079000, C216S080000, C216S099000, C134S001300

Reexamination Certificate

active

07468323

ABSTRACT:
An etching process includes providing a dielectric first film on a substrate and a sacrificial second film on the dielectric first film. A conductive structure such as a container capacitor is formed in a recess in the first and second films. The conductive structure is exposed as to its external surface by an etch process that resists destructive collapse of the conductive structure.

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