Method of forming gate oxide layer in semiconductor device

Details Method of forming gate oxide layer in semiconductor device Method of forming gate oxide layer in semiconductor device

2007-01-30

2007-01-30

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S981000, C257SE21625

Reexamination Certificate

active

10880691

ABSTRACT:
Provided is related to a method of forming a semiconductor device comprises steps of: providing a semiconductor substrate having a low voltage region and a high voltage region; forming a pad oxide layer and a pad nitride layer in sequence on the semiconductor substrate; removing the pad nitride layer and the pad oxide layer on the semiconductor substrate of the high voltage region, wherein a surface of the semiconductor substrate of the high voltage region is exposed and recessed; forming a sacrificial oxide layer on the surface of the semiconductor substrate of the high voltage region; removing the sacrificial layer; forming a first gate oxide layer on the surface of the semiconductor substrate of the high voltage region; removing the pad oxide layer and the pad nitride layer left on the semiconductor substrate of the low voltage region, wherein a surface of the semiconductor substrate of the low voltage region is exposed and recessed; and forming a second gate oxide layer on the first gate oxide layer and the surface of the semiconductor substrate of the low voltage region.

REFERENCES:
patent: 6380020 (2002-04-01), Shimizu
patent: 2002/0119615 (2002-08-01), Kim et al.

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