Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-09-24
2000-09-26
Bowers, Charles
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438263, 438981, H01L 21336
Patent
active
061241717
ABSTRACT:
Transistors are formed on the substrate having two different thickness' of gate oxides. A silicon nitride mask is used to protect one of the gate oxides while the other is grown. A nitride mask is formed from a hydrogen balanced nitride layer formed using direct plasma deposited nitride with an ammonia and silane chemistry. In one embodiment the nitride mask remains in place in the completed transistor.
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Arghavani Reza
Beattie Bruce
Chau Robert S.
Kavalieros Jack
McFadden Bob
Bowers Charles
Chen Jack
Intel Corporation
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