Method of forming gate of flash memory device

Details Method of forming gate of flash memory device Method of forming gate of flash memory device

2007-11-27

2007-11-27

Ullah, Akm (Department: 2809)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S257000, C257SE29304

Reexamination Certificate

active

11490304

ABSTRACT:
A method of forming a gate of a flash memory device, including the steps of forming a tunnel oxide film and a first polysilicon layer in an active region of a semiconductor substrate, an isolation film in the field region, a dielectric layer, a second polysilicon layer, a metal silicide film, and a hard mask film on the structure, etching the hard mask film, the metal silicide film, and a given region of the second polysilicon layer to expose the dielectric layer, stripping a top surface of the exposed dielectric layer of the active region and the field region, a part of the first polysilicon layer of the active region to form dielectric layer horns, the first polysilicon layer and a part of the dielectric layer horns of the active region, and the first polysilicon layer and the dielectric layer horns of the active region.

REFERENCES:
patent: 6617241 (2003-09-01), Doan
patent: 7183205 (2007-02-01), Hong

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