Method of forming gate of flash memory cell

Details Method of forming gate of flash memory cell Method of forming gate of flash memory cell

2006-08-22

2006-08-22

Wilson, Christian D. (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S261000, C438S264000

Reexamination Certificate

active

07094643

ABSTRACT:
A method of forming a gate of a flash memory cell, by which a coupling effect between floating and control gates can be enhanced by forming a polysilicon spacer in forming the floating gate to increase a surface area of the floating gate. The gate is formed by forming a nitride layer pattern on a substrate to define a prescribed space, forming a polysilicon spacer at a sidewall of the nitride layer pattern within the defined space on the first polysilicon, and removing the nitride layer pattern.

REFERENCES:
patent: 5915177 (1999-06-01), Tseng
patent: 6413818 (2002-07-01), Huang et al.

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