Method of forming fully-depleted (FD) SOI MOSFET access...

Details Method of forming fully-depleted (FD) SOI MOSFET access... Method of forming fully-depleted (FD) SOI MOSFET access...

2007-03-13

2007-03-13

Owens, Douglas W. (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S219000, C438S234000

Reexamination Certificate

active

10161615

ABSTRACT:
A fully-depleted (FD) Silicon-on-Insulator (SOI) MOSFET access transistor comprising a gate electrode of a conductivity type which is opposite the conductivity type of the source/drain regions and a method of fabrication are disclosed.

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