Method of forming floating gate, non-volatile memory device...

Details Method of forming floating gate, non-volatile memory device... Method of forming floating gate, non-volatile memory device...

2011-03-01

2011-03-01

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S264000, C438S594000, C257SE21682

Reexamination Certificate

active

07897458

ABSTRACT:
Provided is a method of forming a floating gate, a non-volatile memory device using the same, and a method of fabricating the non-volatile memory device, in which nano-crystals of nano-size whose density and size can be easily adjusted, are synthesized using micelles so as to be used as the floating gate of the non-volatile memory device. The floating gate is fabricated by forming a tunnel oxide film on the semiconductor substrate, coating a gate formation solution on the tunnel oxide film in which the gate formation solution includes micelle templates into which precursors capable of synthesizing metallic salts in nano-structures formed by a self-assembly method are introduced, and arranging the metallic salts on the tunnel oxide film by removing the micelle templates, to thereby form the floating gate.

REFERENCES:
patent: 2009/0148675 (2009-06-01), Sun
patent: 2009/0155967 (2009-06-01), Purayath et al.
patent: 1020050002304 (2005-07-01), None
patent: WO 2005/123373 (2005-12-01), None

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