Method of forming flash memory with protruded floating gate

Details Method of forming flash memory with protruded floating gate Method of forming flash memory with protruded floating gate

2005-05-03

2005-05-03

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S593000

Reexamination Certificate

active

06887756

ABSTRACT:
A method of forming a flash memory with a protruded floating gate. A substrate is provided. An isolation area and a plurality of patterned conductive layers are sequentially formed on the substrate. The isolation area protrudes from the upper surface of the substrate to isolate the patterned conductive layers. A photo resist layer is formed on the patterned conductive layer. The present invention also provides a flash memory with a protruded floating gate comprised a substrate, a plurality of protruded floating gates, an insulator, and a control gate.

REFERENCES:
patent: 6171909 (2001-01-01), Ding et al.
patent: 6498064 (2002-12-01), Tseng

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