Method of forming finFET device

Details Method of forming finFET device Method of forming finFET device

2008-02-13

2009-11-10

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S386000, C438S733000, C257SE21170, C257SE21229, C257SE21248, C257SE21231, C257SE21304, C257SE21396

Reexamination Certificate

active

07615443

ABSTRACT:
The invention discloses a method of forming a finFET device. A hard mask layer is formed on an active area of a semiconductor substrate. A portion of the hard mask layer is etched to form a recess. A conformal gate defining layer is deposited on the recess and a tilt angle ion implantation process is performed. A part of the gate defining layer is removed to define a fin pattern. The fin pattern is subsequently transferred to the hard mask layer. The patterned hard mask layer having the fin pattern is utilized as an etching mask, and the semiconductor substrate is etched to form a fin structure.

REFERENCES:
patent: 7368752 (2008-05-01), Luyken et al.
patent: 7371657 (2008-05-01), Wellhausen et al.
patent: 7442609 (2008-10-01), Wang et al.
patent: 2006/0057814 (2006-03-01), Weis
patent: 2007/0057301 (2007-03-01), Wang et al.

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