Method of forming fine resist pattern in electron beam or X-ray

Details Method of forming fine resist pattern in electron beam or X-ray Method of forming fine resist pattern in electron beam or X-ray

1991-03-08

1992-04-14

Robinson, Ellis P.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

430270, 430322, 430325, 430328, 430394, 430494, 430942, 430966, 430967, G03C 500

Patent

active

051047721

ABSTRACT:
To achieve higher resolution integration in semiconductor device fabrication using electron beam (EB) or X-ray lithography or a method of lithography is disclosed in which: (1) an EB or X-ray resist material is mixed with an absorbing material for ultraviolet (UV)-rays; (2) the resist layer is selectively exposed to the EB or X-ray with the total irradiation density less than applied in a conventional EB or X-ray exposure; and (3) the entire surface of the resist layer is further exposed to the UV-ray for a total irradiation period less than a minimum level required to induce a reaction in said resist layer. Resist materials such as chloromethylated polystyrene (CMS), polydiarylorthophtalate (PDOP), and polymethylmethacrylate (PMMA), each mixed with p-azido acetophenone as the UV-ray absorbing material improve contrast and resolution of the resist layer. Other UV-ray absorbing materials such as p-azido benzoic acid and 3-sulfonylazido benzoic acid achieve the same result.

REFERENCES:
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patent: 4403151 (1983-09-01), Mochiji et al.
patent: 4508813 (1985-04-01), Nakagawa
patent: 4552831 (1985-11-01), Liu
patent: 4659650 (1987-04-01), Moritz et al.
patent: 4715929 (1987-12-01), Ogawa
patent: 4806456 (1989-02-01), Katoh
"Hybrid E-Beam/Deep-UV Exposure Using Portable Conformable Masking (PCM) Technique" by Lin et al., J. Vac. Sci. Technol., 16(6), Nov./Dec. 1979, pp. 1669-1671.
"U. V. Hardening of Photo- and Electron Beam Resist Patterns" by Hiraoka et al., J. Vac. Sci. Technol., 19(4), Nov./Dec. 1981, pp. 1132-1135.
IBM Technical Disclosure Bulletin, vol. 24, No. 11A, Apr. 1982, p. 5549, New York, U.S.; G. E. Henderson et al.: "Profile Improvement in E-Beam-Exposed Resist Patterns".

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