Method of forming fine patterns using silicon oxide layer

Details Method of forming fine patterns using silicon oxide layer Method of forming fine patterns using silicon oxide layer

2006-01-24

2006-01-24

McPherson, John A. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S314000, C430S317000, C430S316000

Reexamination Certificate

active

06989231

ABSTRACT:
Provided is a method of forming a fine pattern, in which a silicon oxide layer is formed on a photoresist pattern and dry etching is performed on the resultant structure. According to the method, a photoresist pattern is formed on a material layer on which a fine pattern is to be formed, a silicon oxide layer is conformally deposited on the photoresist pattern without damaging the photoresist pattern, and dry etching is performed on a lower layer. During the dry etching, spacers are formed along the sidewalls of the photoresist pattern, and then, a polymer layer is formed on the photoresist pattern. Accordingly, it is possible to prevent the thinning of the photoresist pattern so that a desired pattern can be obtained, and further, to prevent striation or wiggling from occurring on the patterned material layer.

REFERENCES:
patent: 6004853 (1999-12-01), Yang et al.
patent: 97-24184 (1997-05-01), None
patent: 98-54746 (1998-09-01), None

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