Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-01-18
2011-01-18
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S294000, C257SE21159, C257SE21410
Reexamination Certificate
active
07871873
ABSTRACT:
A method of manufacturing semiconductor fins for a semiconductor device may begin by providing a bulk semiconductor substrate. The method continues by growing a layer of first epitaxial semiconductor material on the bulk semiconductor substrate, and by growing a layer of second epitaxial semiconductor material on the layer of first epitaxial semiconductor material. The method then creates a fin pattern mask on the layer of second epitaxial semiconductor material. The fin pattern mask has features corresponding to a plurality of fins. Next, the method anisotropically etches the layer of second epitaxial semiconductor material, using the fin pattern mask as an etch mask, and using the layer of first epitaxial semiconductor material as an etch stop layer. This etching step results in a plurality of fins formed from the layer of second epitaxial semiconductor material.
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Cho Jin
Krivokapic Zoran
Lin Ming-Ren
Maszara Witold
GLOBAL FOUNDRIES Inc.
Ingrassia Fisher & Lorenz P.C.
Lindsay, Jr. Walter L
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