Method of forming field isolation in manufacturing a semiconduct

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438451, H01L 218238

Patent

active

057892873

ABSTRACT:
This invention discloses a method of manufacturing a semiconductor device, especially a method of forming field isolation, in which a portion of an active region around a field oxide film is highly-doped with the same type impurities as channel-stop impurity ions so that it changes a low-doped channel-stop region which results from a high temperature of field oxidation to a high-doped channel-stop region to prevent field inversion in device operation.

REFERENCES:
patent: 4554726 (1985-11-01), Hillenius et al.
patent: 4598460 (1986-07-01), Owens et al.
patent: 4761384 (1988-08-01), Neppl et al.
patent: 4839301 (1989-06-01), Lee
patent: 5138420 (1992-08-01), Komori et al.
patent: 5169792 (1992-12-01), Katoh et al.
patent: 5563091 (1996-10-01), Lee

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of forming field isolation in manufacturing a semiconduct does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming field isolation in manufacturing a semiconduct, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming field isolation in manufacturing a semiconduct will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1176521

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.