Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1996-04-10
1998-08-04
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438451, H01L 218238
Patent
active
057892873
ABSTRACT:
This invention discloses a method of manufacturing a semiconductor device, especially a method of forming field isolation, in which a portion of an active region around a field oxide film is highly-doped with the same type impurities as channel-stop impurity ions so that it changes a low-doped channel-stop region which results from a high temperature of field oxidation to a high-doped channel-stop region to prevent field inversion in device operation.
REFERENCES:
patent: 4554726 (1985-11-01), Hillenius et al.
patent: 4598460 (1986-07-01), Owens et al.
patent: 4761384 (1988-08-01), Neppl et al.
patent: 4839301 (1989-06-01), Lee
patent: 5138420 (1992-08-01), Komori et al.
patent: 5169792 (1992-12-01), Katoh et al.
patent: 5563091 (1996-10-01), Lee
Chaudhari Chandra
Harris Esq. Scott C.
Hyundai Electronics Industries Co,. Ltd.
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