Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2006-06-13
2006-06-13
Norton, Nadine (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S703000, C438S722000
Reexamination Certificate
active
07060622
ABSTRACT:
According to the present invention, a dummy wafer is formed by forming a masking film on a rear surface of a silicon wafer; spray coating aluminum and depositing an aluminum film on a front surface of the silicon wafer; spray coating ceramics or carbon and depositing a ceramic film or carbon film on the aluminum film so that the aluminum film may be completely covered; and removing the masking film formed on the rear surface. Also, a dummy wafer can be formed by using an aluminum wafer as a wafer substrate and subjecting it to anodic oxidation to form a film of aluminum oxide.
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Hidaka Munenori
Miyamori Yuichiro
Yoshida Masashi
Norton Nadine
Oki Electric Industry Co. Ltd.
Rabin & Berdo PC
Tran Binh X.
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