Method of forming dummy wafer

Semiconductor device manufacturing: process – Chemical etching – Combined with coating step

Reexamination Certificate

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C438S703000, C438S722000

Reexamination Certificate

active

07060622

ABSTRACT:
According to the present invention, a dummy wafer is formed by forming a masking film on a rear surface of a silicon wafer; spray coating aluminum and depositing an aluminum film on a front surface of the silicon wafer; spray coating ceramics or carbon and depositing a ceramic film or carbon film on the aluminum film so that the aluminum film may be completely covered; and removing the masking film formed on the rear surface. Also, a dummy wafer can be formed by using an aluminum wafer as a wafer substrate and subjecting it to anodic oxidation to form a film of aluminum oxide.

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patent: 2003/0075452 (2003-04-01), Hsu et al.
patent: 08-316283 (1996-11-01), None

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