Method of forming dummy wafer

Details Method of forming dummy wafer Method of forming dummy wafer

2006-06-13

2006-06-13

Norton, Nadine (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S703000, C438S722000

Reexamination Certificate

active

07060622

ABSTRACT:
According to the present invention, a dummy wafer is formed by forming a masking film on a rear surface of a silicon wafer; spray coating aluminum and depositing an aluminum film on a front surface of the silicon wafer; spray coating ceramics or carbon and depositing a ceramic film or carbon film on the aluminum film so that the aluminum film may be completely covered; and removing the masking film formed on the rear surface. Also, a dummy wafer can be formed by using an aluminum wafer as a wafer substrate and subjecting it to anodic oxidation to form a film of aluminum oxide.

REFERENCES:
patent: 3775262 (1973-11-01), Heyerdahl
patent: 5141603 (1992-08-01), Dickey et al.
patent: 5296385 (1994-03-01), Moslehi et al.
patent: 5746928 (1998-05-01), Yen et al.
patent: 5810937 (1998-09-01), Gupta et al.
patent: 6159333 (2000-12-01), Gupta et al.
patent: 6358821 (2002-03-01), Gupta et al.
patent: 6394104 (2002-05-01), Chen et al.
patent: 2003/0075452 (2003-04-01), Hsu et al.
patent: 08-316283 (1996-11-01), None

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