Method of forming double gate dielectric layers and...

Details Method of forming double gate dielectric layers and... Method of forming double gate dielectric layers and...

2008-05-27

2008-05-27

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S765000, C438S769000, C438S770000, C257SE21625, C257SE21639

Reexamination Certificate

active

07378319

ABSTRACT:
A method of forming double gate dielectric layers composed of an underlying oxide layer and an overlying oxy-nitride layer is provided to prevent degradation of gate dielectric properties due to plasma-induced charges. In the method, the oxide layer is thermally grown on a silicon substrate under oxygen gas atmosphere to have a first thickness, and then the oxy-nitride layer is thermally grown on the oxide layer under nitrogen monoxide gas atmosphere to have a second thickness smaller than the first thickness. The substrate may have a high voltage area and a low voltage area, and the oxide layer may be partially etched in the low voltage area so as to have a reduced thickness. The oxy-nitride layer behaves like a barrier, blocking the inflow of the plasma-induced charges.

REFERENCES:
patent: 6436771 (2002-08-01), Jang et al.
patent: 6475862 (2002-11-01), Ando
patent: 2003/0045080 (2003-03-01), Visokay et al.

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