Method of forming dielectric layers on a substrate and...

Details Method of forming dielectric layers on a substrate and... Method of forming dielectric layers on a substrate and...

2011-03-22

2011-03-22

Richards, N. Drew (Department: 2895)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S474000, C257SE21143, C257SE21311

Reexamination Certificate

active

07910497

ABSTRACT:
Methods of forming dielectric layers on a substrate comprising silicon and oxygen are disclosed herein. In some embodiments, a method of forming a dielectric layer on a substrate includes provide a substrate having an exposed silicon oxide layer; treating an upper surface of the silicon oxide layer with a plasma; and depositing a silicon nitride layer on the treated silicon oxide layer via atomic layer deposition. The silicon nitride layer may be exposed to a plasma nitridation process. The silicon oxide and silicon nitride layers may be subsequently thermally annealed. The dielectric layers may be used as part of a gate structure.

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