Method of forming dielectric films

Details Method of forming dielectric films Method of forming dielectric films

2011-04-12

2011-04-12

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S785000, C257SE21248

Reexamination Certificate

active

07923360

ABSTRACT:
A method of forming dielectric films including a metal silicate on a silicon substrate comprises a first step of oxidizing a surface layer portion of the silicon substrate and forming a silicon dioxide film; a second step of irradiating ion on the surface of the silicon dioxide film and making the surface layer portion of the silicon dioxide film into a reaction-accelerating layer with Si—O cohesion cut; a third step of laminating a metal film on the reaction-accelerating layer in a non-oxidizing atmosphere; and a fourth step of oxidizing the metal film and forming a metal silicate film that diffuses a metal from the metal film to the silicon dioxide film.

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patent: 7374635 (2008-05-01), Murakawa et al.
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patent: 2005/0233526 (2005-10-01), Watanabe et al.
patent: 1194380 (2005-03-01), None
patent: 1669153 (2005-09-01), None
Chinese Office Action issued in the counterpart Application No. 200810190692.5 dated Dec. 18, 2009 (English language translation included)—9 pages.
U.S. Appl. No. 12/342,360, filed Dec. 23, 2008.
U.S. Appl. No. 12/338,121, filed Dec. 18, 2008.

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