Method of forming dielectric film of semiconductor memory device

Details Method of forming dielectric film of semiconductor memory device Method of forming dielectric film of semiconductor memory device

1997-11-03

1999-04-27

Booth, Richard A.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438704, H01L 218247

Patent

active

058973532

ABSTRACT:
A method of forming a stable type of dielectric film of flash EEPROM by preventing forming of unusual type of oxide film. The method of manufacturing dielectric film comprising the steps of: forming a first polysilicon film, a first dielectric film and a second polysilicon film on the active region of a semiconductor substrate sequentially; patterning said second polysilicon film, the first dielectric film and the first polysilicon film in the same size respectively; forming a curved surface on the side wall of the first dielectric film using wet etching technique in order to accelerate the growth of second dielectric film on the side wall of the first polysilicon film during the subsequent oxidation process; and forming the second dielectric film on the exposed surfaces of the patterned first polysilicon film, first dielectric film, and second polysilicon film using thermal oxidation process.

REFERENCES:
patent: 5019527 (1991-05-01), Ohshima et al.
patent: 5120670 (1992-06-01), Bergmont
patent: 5145797 (1992-09-01), Nakanishi
patent: 5208175 (1993-05-01), Choi et al.
patent: 5258095 (1993-11-01), Nagata et al.
patent: 5304829 (1994-04-01), Mori et al.
patent: 5342801 (1994-08-01), Perry et al.
patent: 5661056 (1997-08-01), Takeuchi

Affiliated with

Also associated with

Rating

Method of forming dielectric film of semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming dielectric film of semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming dielectric film of semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-681025