Method of forming devices having three different operation...

Details Method of forming devices having three different operation... Method of forming devices having three different operation...

2006-08-15

2006-08-15

Pham, Thanhha (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S218000, C438S223000, C438S275000

Reexamination Certificate

active

07091079

ABSTRACT:
The present invention provides a method of forming devices having different operation voltages. First, a substrate having an HV region, an MV region, and an LV region is provided. Then, at least a deep well encompassing the LV region and the MV region is formed in the substrate. Afterward, a plurality of n-wells and a plurality of p-wells are in the HV region, the MV region, and the LV region. Following that, a plurality of HV devices are formed in the HV region, a plurality of MV devices are formed in the MV region, and a plurality of LV devices are formed in the LV region.

REFERENCES:
patent: 6133164 (2000-10-01), Kim
patent: 6551884 (2003-04-01), Masuoka
patent: 6602751 (2003-08-01), Oohashi
patent: 6890822 (2005-05-01), Kim et al.
patent: 6897104 (2005-05-01), Tsujikawa et al.

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