Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-08-09
2011-08-09
Luu, Chuong A. (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S488000, C438S097000, C438S485000
Reexamination Certificate
active
07993994
ABSTRACT:
A method of crystallizing amorphous silicon comprises forming an amorphous silicon layer on a substrate; forming an insulating layer on the amorphous silicon layer; forming a heat distributing metal layer on the insulating layer; and forming a thermite layer on the heat distributing metal layer. Ignition heat is then applied to ignite the thermite layer and generate sufficient localized exothermic heat from the ignited thermite layer so as to crystallize the amorphous silicon layer. The substrate beneath the amorphous silicon layer can be a heat sensitive substrate which is not substantially deformed by the localized crystallizing heat applied to the top portion of the amorphous silicon layer by way of the heat distributing metal layer and the insulating layer.
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patent: 2009/0186437 (2009-07-01), Akimoto
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Hwang Tae-Hyung
Jeong Woong-Hee
Jung Tae-Hun
Kim Do-Kyung
Kim Hyun-Jae
Industry-Academic Cooperation Foundation, Younsei University
Innovation Counsel LLP
Luu Chuong A.
Samsung Electronics Co,. Ltd.
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